FP10R12W1T7BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1B-1
$42.97
Available to order
Reference Price (USD)
1+
$42.97000
500+
$42.5403
1000+
$42.1106
1500+
$41.6809
2000+
$41.2512
2500+
$40.8215
Exquisite packaging
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Engineered for excellence, the FP10R12W1T7BOMA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FP10R12W1T7BOMA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FP10R12W1T7BOMA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 10 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 4.5 µA
- Input Capacitance (Cies) @ Vce: 1890 pF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B
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