NXH75M65L4Q1PTG
onsemi
onsemi
6KW H6.5 75A Q1PACK PRESS-FIT PI
$61.04
Available to order
Reference Price (USD)
1+
$61.03952
500+
$60.4291248
1000+
$59.8187296
1500+
$59.2083344
2000+
$58.5979392
2500+
$57.987544
Exquisite packaging
Discount
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onsemi's NXH75M65L4Q1PTG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the NXH75M65L4Q1PTG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust onsemi to deliver cutting-edge IGBT solutions with the NXH75M65L4Q1PTG power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 59 A
- Power - Max: 86 W
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 27-PIM (71x37.4)
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