MII150-12A4
IXYS
IXYS
IGBT MOD 1200V 180A 760W Y3DCB
$138.57
Available to order
Reference Price (USD)
2+
$108.40000
Exquisite packaging
Discount
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Discover the power of IXYS's MII150-12A4, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The MII150-12A4 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With IXYS's MII150-12A4, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 180 A
- Power - Max: 760 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 7.5 mA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB
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