FMM7G20US60I
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$26.00
Available to order
Reference Price (USD)
1+
$26.00000
500+
$25.74
1000+
$25.48
1500+
$25.22
2000+
$24.96
2500+
$24.7
Exquisite packaging
Discount
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Experience next-generation power control with Fairchild Semiconductor's FMM7G20US60I IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FMM7G20US60I offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FMM7G20US60I in your next-generation HVDC systems or particle accelerator power supplies. Fairchild Semiconductor delivers reliability where it matters most with the FMM7G20US60I IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Power - Max: 89 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: -
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