MID75-12A3
IXYS
IXYS
IGBT MODULE 1200V 90A 370W Y4M5
$55.63
Available to order
Reference Price (USD)
6+
$49.69167
Exquisite packaging
Discount
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IXYS's MID75-12A3 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the MID75-12A3 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the MID75-12A3 power module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 370 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
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