FPF2C8P2NL07A
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$75.16
Available to order
Reference Price (USD)
70+
$76.76957
Exquisite packaging
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The FPF2C8P2NL07A from Fairchild Semiconductor exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FPF2C8P2NL07A in megawatt-level wind turbine converters. With Fairchild Semiconductor's proven track record, the FPF2C8P2NL07A represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 135 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: F2 Module
- Supplier Device Package: F2
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