FD200R12KE3PHOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 200A
$174.48
Available to order
Reference Price (USD)
8+
$114.16625
Exquisite packaging
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The FD200R12KE3PHOSA1 from Infineon Technologies is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the FD200R12KE3PHOSA1 is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose Infineon Technologies's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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