FDB0165N807L
onsemi
onsemi
MOSFET N-CH 80V 310A TO263-7
$8.73
Available to order
Reference Price (USD)
800+
$3.75649
1,600+
$3.51901
2,400+
$3.35277
Exquisite packaging
Discount
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Meet the FDB0165N807L by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FDB0165N807L stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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