NP100P06PLG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 100A TO263
$2.99
Available to order
Reference Price (USD)
1+
$2.99040
500+
$2.960496
1000+
$2.930592
1500+
$2.900688
2000+
$2.870784
2500+
$2.84088
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the NP100P06PLG-E1-AY by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NP100P06PLG-E1-AY is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Linear Integrated Systems, Inc.
SD214DE TO-72 4L
Infineon Technologies
IPA60R280P7SXKSA1
Nexperia USA Inc.
PH5030AL115
Rohm Semiconductor
RCD041N25TL
onsemi
FDD4141
Vishay Siliconix
SI7862ADP-T1-E3
onsemi
NTMFS020N06CT1G
Diodes Incorporated
DMNH6012LK3Q-13
Vishay Siliconix
SIDR610EP-T1-RE3
IXYS