Shopping cart

Subtotal: $0.00

FDB0300N1007L

onsemi
FDB0300N1007L Preview
onsemi
MOSFET N-CH 100V 200A TO263-7
$6.70
Available to order
Reference Price (USD)
800+
$3.62443
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8295 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

Related Products

Nexperia USA Inc.

PSMN1R0-40YLDX

STMicroelectronics

STW45N60DM6

Vishay Siliconix

SISA24DN-T1-GE3

Diodes Incorporated

DMN3731U-13

Microchip Technology

APT5015SVFRG

STMicroelectronics

STD15N60DM6

Nexperia USA Inc.

BSS138AKAR

Top