FDD2512
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 150V 6.7A TO252
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDD2512 from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's FDD2512 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 42W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
TP2502N8-G
Infineon Technologies
IRF7456TRPBF
Alpha & Omega Semiconductor Inc.
AOB288L
Vishay Siliconix
IRFR9310TRPBF
Micro Commercial Co
MCT04P06-TP
onsemi
FQP10N20C
GeneSiC Semiconductor
G3R75MT12D
Toshiba Semiconductor and Storage
TK090A65Z,S4X
STMicroelectronics
STW75N60M6-4
onsemi