FDMD8900
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, N
$0.91
Available to order
Reference Price (USD)
3,000+
$0.96852
Exquisite packaging
Discount
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The FDMD8900 by Fairchild Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the FDMD8900 provides reliable operation under stringent conditions. Fairchild Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 19A, 17A
- Rds On (Max) @ Id, Vgs: 4mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2605pF @ 15V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerWDFN
- Supplier Device Package: 12-Power3.3x5
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