FDMS86202ET120
onsemi
onsemi
MOSFET N-CH 120V 13.5/102A PWR56
$6.61
Available to order
Reference Price (USD)
3,000+
$2.17548
Exquisite packaging
Discount
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Upgrade your designs with the FDMS86202ET120 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FDMS86202ET120 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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