FDP2D9N12C
onsemi
onsemi
PTNG 120V N-FET TO220
$4.35
Available to order
Reference Price (USD)
1+
$4.34963
500+
$4.3061337
1000+
$4.2626374
1500+
$4.2191411
2000+
$4.1756448
2500+
$4.1321485
Exquisite packaging
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The FDP2D9N12C by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDP2D9N12C is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 686µA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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