FDS2170N7
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 200V 3A 8SOIC
$2.01
Available to order
Reference Price (USD)
1+
$2.01000
500+
$1.9899
1000+
$1.9698
1500+
$1.9497
2000+
$1.9296
2500+
$1.9095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDS2170N7 from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDS2170N7 offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 128mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1292 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SIA461DJ-T1-GE3
Infineon Technologies
BTS282ZE3180AATMA2
Taiwan Semiconductor Corporation
TSM950N10CW RPG
onsemi
MTP16N25E
Nexperia USA Inc.
PMPB20XPE,115
Fairchild Semiconductor
ISL9N322AP3
onsemi
NDD01N60-1G
Diodes Incorporated
2N7002T-7-F
STMicroelectronics
STF9N80K5
Vishay Siliconix