FDS6064N3
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 20V 23A 8SO
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
500+
$1.6038
1000+
$1.5876
1500+
$1.5714
2000+
$1.5552
2500+
$1.539
Exquisite packaging
Discount
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Meet the FDS6064N3 by Fairchild Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FDS6064N3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Fairchild Semiconductor.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 23A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 7191 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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