NTGS3130NT1G
onsemi
onsemi
MOSFET N-CH 20V 4.23A 6TSOP
$0.91
Available to order
Reference Price (USD)
3,000+
$0.35090
6,000+
$0.32670
15,000+
$0.31460
30,000+
$0.30800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NTGS3130NT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTGS3130NT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Fairchild Semiconductor
FDP14AN06LA0
onsemi
NVTYS003N04CTWG
Panjit International Inc.
PJA3402-AU_R1_000A1
Infineon Technologies
BSC037N08NS5ATMA1
Nexperia USA Inc.
PSMN6R3-120PS
Infineon Technologies
AUIRFR2407TRL
Toshiba Semiconductor and Storage
SSM3K35AMFV,L3F
Fairchild Semiconductor
HUF76639S3S
onsemi
NVTFWS9D6P04M8LTAG
Infineon Technologies