PSMN6R3-120PS
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 120V 70A TO220AB
$4.22
Available to order
Reference Price (USD)
1+
$3.17000
50+
$2.54920
100+
$2.32270
500+
$1.88078
1,000+
$1.58620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN6R3-120PS by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PSMN6R3-120PS is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 207.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11384 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 405W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
AUIRFR2407TRL
Toshiba Semiconductor and Storage
SSM3K35AMFV,L3F
Fairchild Semiconductor
HUF76639S3S
onsemi
NVTFWS9D6P04M8LTAG
Infineon Technologies
IAUA250N04S6N007EAUMA1
onsemi
FQB55N10TM
Vishay Siliconix
SIR846DP-T1-GE3
Fairchild Semiconductor
ISL9N7030BLS3ST
Nexperia USA Inc.
PMZB950UPEYL
Taiwan Semiconductor Corporation