FDU6692
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$1.28
Available to order
Reference Price (USD)
1+
$1.28000
500+
$1.2672
1000+
$1.2544
1500+
$1.2416
2000+
$1.2288
2500+
$1.216
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDU6692 from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDU6692 offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Vishay Siliconix
SI7155DP-T1-GE3
MDD
SI2301S-2.3A
Nexperia USA Inc.
BUK9606-75B,118
Vishay Siliconix
SISA14BDN-T1-GE3
IXYS
IXFH12N120P
Vishay Siliconix
SIHP6N80AE-GE3
Diodes Incorporated
DMG2305UXQ-7
Toshiba Semiconductor and Storage
TJ60S04M3L(T6L1,NQ
Fairchild Semiconductor
FQPF13N06
onsemi