FF08MR12W1MA1B11ABPSA1
Infineon Technologies
Infineon Technologies
EASY PACK
$410.40
Available to order
Reference Price (USD)
1+
$410.40000
500+
$406.296
1000+
$402.192
1500+
$398.088
2000+
$393.984
2500+
$389.88
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the FF08MR12W1MA1B11ABPSA1 from Infineon Technologies for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the FF08MR12W1MA1B11ABPSA1 stands out for its reliability and efficiency. Infineon Technologies's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
- Rds On (Max) @ Id, Vgs: 9.8mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 90mA
- Gate Charge (Qg) (Max) @ Vgs: 15V
- Input Capacitance (Ciss) (Max) @ Vds: 600V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
Related Products
Fairchild Semiconductor
FDPC1012S
Nexperia USA Inc.
PMDPB56XNEAX
Infineon Technologies
IPG20N04S409ATMA1
Vishay Siliconix
SIA907EDJT-T1-GE3
onsemi
ECH8655R-TL-H
Advanced Linear Devices Inc.
ALD110914SAL
Diodes Incorporated
DMG1016VQ-13
Rohm Semiconductor
QS8J11TCR
onsemi
FDMD8280
Nexperia USA Inc.