PMDT290UNE,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.8A SOT666
$0.51
Available to order
Reference Price (USD)
4,000+
$0.12415
8,000+
$0.11662
12,000+
$0.10910
28,000+
$0.10007
100,000+
$0.09576
Exquisite packaging
Discount
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Choose the PMDT290UNE,115 from Nexperia USA Inc. for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the PMDT290UNE,115 stands out for its reliability and efficiency. Nexperia USA Inc.'s advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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