SQ1922AEEH-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH DUAL 20V .85A SOT-36
$0.48
Available to order
Reference Price (USD)
1+
$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
Discount
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The SQ1922AEEH-T1_GE3 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SQ1922AEEH-T1_GE3 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
- Power - Max: 1.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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