SIZF5300DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 30 V (D-S) MOSFET
$2.16
Available to order
Reference Price (USD)
1+
$2.16000
500+
$2.1384
1000+
$2.1168
1500+
$2.0952
2000+
$2.0736
2500+
$2.052
Exquisite packaging
Discount
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The SIZF5300DT-T1-GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SIZF5300DT-T1-GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 125A (Tc)
- Rds On (Max) @ Id, Vgs: 2.43mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V
- Power - Max: 4.5W (Ta), 56.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerPair™
- Supplier Device Package: PowerPAIR® 3x3FS
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