DF23MR12W1M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V
$113.86
Available to order
Reference Price (USD)
1+
$113.86000
500+
$112.7214
1000+
$111.5828
1500+
$110.4442
2000+
$109.3056
2500+
$108.167
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DF23MR12W1M1PB11BPSA1 by Infineon Technologies is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DF23MR12W1M1PB11BPSA1 ensures consistent and dependable performance. Infineon Technologies's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
Related Products
Diodes Incorporated
DMN3060LVT-7
Nexperia USA Inc.
NX1029XH
Microchip Technology
APTC60TAM35PG
onsemi
NTMD6N03R2
Advanced Linear Devices Inc.
ALD110804SCL
Rohm Semiconductor
SP8K80TB1
Rohm Semiconductor
QS8K11TCR
General Electric
GE17042BCA3
Diodes Incorporated
ZXMN2A04DN8TA
Microchip Technology