FF11MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 1200V 100A MODULE
$230.98
Available to order
Reference Price (USD)
1+
$155.83000
Exquisite packaging
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The FF11MR12W1M1B11BOMA1 from Infineon Technologies is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the FF11MR12W1M1B11BOMA1 provides reliable performance in demanding environments. Choose Infineon Technologies for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A
- Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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