FF225R17ME4PB11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 450A 20MW
$147.75
Available to order
Reference Price (USD)
6+
$145.52500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FF225R17ME4PB11BPSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FF225R17ME4PB11BPSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FF225R17ME4PB11BPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGT600U170D4G
Microchip Technology
APT75GT120JU3
Infineon Technologies
FP75R12W3T7B11BPSA1
Infineon Technologies
FF400R12KT3HOSA1
IXYS
IXGN72N60C3H1
Infineon Technologies
FS100R12PT4BOSA1
Infineon Technologies
IFF300B17N2E4PB11BPSA1
Infineon Technologies
FP50R06W2E3BOMA1
Infineon Technologies
FS450R17KE3BOSA1
Infineon Technologies