FF225R65T3E3P6BPMA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-XHP3K6
$2,312.64
Available to order
Reference Price (USD)
1+
$2312.64000
500+
$2289.5136
1000+
$2266.3872
1500+
$2243.2608
2000+
$2220.1344
2500+
$2197.008
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's FF225R65T3E3P6BPMA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FF225R65T3E3P6BPMA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FF225R65T3E3P6BPMA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 5900 V
- Current - Collector (Ic) (Max): 225 A
- Power - Max: 1000 kW
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 225A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 65.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-XHP3K65
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