FDDF80R12W1H3B52BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$27.61
Available to order
Reference Price (USD)
1+
$27.61000
500+
$27.3339
1000+
$27.0578
1500+
$26.7817
2000+
$26.5056
2500+
$26.2295
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FDDF80R12W1H3B52BOMA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FDDF80R12W1H3B52BOMA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FDDF80R12W1H3B52BOMA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FDDF80R12W1H3B52BOMA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
NXH40T120L3Q1PG
IXYS
MIXG180W1200TEH
onsemi
NXH80B120MNQ0SNG
IXYS
MWI150-12T8T
Microchip Technology
MSCGLQ50DU120CTBL1NG
Infineon Technologies
FF400R12KT4HOSA1
Infineon Technologies
FF600R12ME4CPBPSA1
Infineon Technologies
FF450R33T3E3B5P3BPMA1
IXYS
MIXA225PF1200TSF
Infineon Technologies