FF23MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET 2 N-CH 1200V 50A MODULE
$125.38
Available to order
Reference Price (USD)
1+
$92.77000
Exquisite packaging
Discount
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Elevate your electronics with the FF23MR12W1M1B11BOMA1 from Infineon Technologies, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the FF23MR12W1M1B11BOMA1 provides the reliability and efficiency you need. Infineon Technologies's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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