FF2MR12KM1HOSA1
Infineon Technologies
Infineon Technologies
MEDIUM POWER 62MM
$1,213.36
Available to order
Reference Price (USD)
1+
$1213.36000
500+
$1201.2264
1000+
$1189.0928
1500+
$1176.9592
2000+
$1164.8256
2500+
$1152.692
Exquisite packaging
Discount
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Discover the high-performance FF2MR12KM1HOSA1 from Infineon Technologies, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the FF2MR12KM1HOSA1 delivers unmatched performance. Trust Infineon Technologies's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
- Rds On (Max) @ Id, Vgs: 2.13mOhm @ 500A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs: 1340nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
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