ZXMHC3A01T8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
$1.87
Available to order
Reference Price (USD)
1,000+
$0.98725
2,000+
$0.92675
5,000+
$0.89650
10,000+
$0.88000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMHC3A01T8TA by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the ZXMHC3A01T8TA provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Power - Max: 1.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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