FF400R12KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 580A 2000W
$258.82
Available to order
Reference Price (USD)
1+
$155.13000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with Infineon Technologies's FF400R12KE3HOSA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FF400R12KE3HOSA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FF400R12KE3HOSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 580 A
- Power - Max: 2000 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF600R12ME4PBOSA1
Infineon Technologies
F3L400R07ME4B23BOSA1
onsemi
NXH35C120L2C2SG
Infineon Technologies
FP20R06W1E3B11BOMA1
Fairchild Semiconductor
FMG2G400US60
Infineon Technologies
FF450R17IE4BOSA2
Infineon Technologies
FP40R12KE3GBOSA1
Infineon Technologies
FP25R12W2T4PBPSA1
Infineon Technologies
FZ400R65KE3NOSA1
Infineon Technologies