NXH35C120L2C2SG
onsemi
onsemi
IGBT MODULE, CIB 1200 V, 35 A IG
$106.60
Available to order
Reference Price (USD)
1+
$106.60000
500+
$105.534
1000+
$104.468
1500+
$103.402
2000+
$102.336
2500+
$101.27
Exquisite packaging
Discount
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onsemi's NXH35C120L2C2SG represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the NXH35C120L2C2SG in industrial servo drives or medium-voltage frequency converters. Trust onsemi's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
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