FF6MR12KM1PHOSA1
Infineon Technologies
Infineon Technologies
MEDIUM POWER 62MM
$532.68
Available to order
Reference Price (USD)
1+
$532.68000
500+
$527.3532
1000+
$522.0264
1500+
$516.6996
2000+
$511.3728
2500+
$506.046
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the FF6MR12KM1PHOSA1 from Infineon Technologies for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the FF6MR12KM1PHOSA1 stands out for its reliability and efficiency. Infineon Technologies's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
Related Products
Sanken
SLA5065
onsemi
FDS6912A
Diodes Incorporated
DMC2053UFDB-13
Fairchild Semiconductor
NDS8934
Diodes Incorporated
DMN2050LFDB-13
Renesas Electronics America Inc
RJK03K3DPA-00#J5A
Sanken
SLA5075
Rectron USA
RM2003
Rohm Semiconductor
SH8K12TB1
Sanyo