FF6MR12W2M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V 200A
$425.66
Available to order
Reference Price (USD)
1+
$304.56000
15+
$291.69267
Exquisite packaging
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The FF6MR12W2M1B11BOMA1 by Infineon Technologies is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the FF6MR12W2M1B11BOMA1 offers superior functionality and longevity. Trust Infineon Technologies to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
- Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2BM-2
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