FF8MR12W2M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 1200V AG-EASY2BM-2
$326.66
Available to order
Reference Price (USD)
1+
$233.75000
15+
$223.86933
Exquisite packaging
Discount
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Upgrade your electronic designs with the FF8MR12W2M1B11BOMA1 by Infineon Technologies, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the FF8MR12W2M1B11BOMA1 ensures energy efficiency and robust performance. Infineon Technologies's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
- Vgs(th) (Max) @ Id: 5.55V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2BM-2
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