FF900R17ME7B11BPSA1
Infineon Technologies
Infineon Technologies
MEDIUM POWER ECONO
$600.58
Available to order
Reference Price (USD)
1+
$600.58000
500+
$594.5742
1000+
$588.5684
1500+
$582.5626
2000+
$576.5568
2500+
$570.551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FF900R17ME7B11BPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FF900R17ME7B11BPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FF900R17ME7B11BPSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
Microchip Technology
APTGT300DU120G
IXYS
MID150-12A4
IXYS
MIXA40W1200TED
Infineon Technologies
DD800S17K6CB2NOSA1
Microchip Technology
APTGT75H60T3G
Infineon Technologies
FF600R12IS4FBOSA1
Infineon Technologies
FS50R12W2T7BPSA1
IXYS
MIXG180W1200PTEH
IXYS
MWI50-12T7T
Infineon Technologies