BSM35GD120DN2E3224BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2A-211
$163.88
Available to order
Reference Price (USD)
1+
$163.88000
500+
$162.2412
1000+
$160.6024
1500+
$158.9636
2000+
$157.3248
2500+
$155.686
Exquisite packaging
Discount
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Infineon Technologies's BSM35GD120DN2E3224BPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the BSM35GD120DN2E3224BPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the BSM35GD120DN2E3224BPSA1 power module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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