NXH100B120H3Q0STG
onsemi
onsemi
IGBT MODULE 1200V 50A 186W PIM22
$70.98
Available to order
Reference Price (USD)
1+
$70.97750
500+
$70.267725
1000+
$69.55795
1500+
$68.848175
2000+
$68.1384
2500+
$67.428625
Exquisite packaging
Discount
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onsemi's NXH100B120H3Q0STG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the NXH100B120H3Q0STG enables higher power density in MRI gradient amplifiers. Choose onsemi for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 186 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
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