NXH40B120MNQ0SNG
onsemi
onsemi
80KW GENII 1200V 80MOHM SIC MOSF
$83.45
Available to order
Reference Price (USD)
1+
$83.45000
500+
$82.6155
1000+
$81.781
1500+
$80.9465
2000+
$80.112
2500+
$79.2775
Exquisite packaging
Discount
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The NXH40B120MNQ0SNG by onsemi redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the NXH40B120MNQ0SNG in high-efficiency servo controllers for manufacturing automation. onsemi combines innovation with quality in every NXH40B120MNQ0SNG module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Dual Boost Chopper
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: 118 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 3.227 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
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