FP200R12N3T7B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO
$441.60
Available to order
Reference Price (USD)
1+
$441.60000
500+
$437.184
1000+
$432.768
1500+
$428.352
2000+
$423.936
2500+
$419.52
Exquisite packaging
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Optimize your power systems with Infineon Technologies's FP200R12N3T7B11BPSA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FP200R12N3T7B11BPSA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FP200R12N3T7B11BPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
- Current - Collector Cutoff (Max): 20 µA
- Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO3
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