NXH50M65L4Q1SG
onsemi
onsemi
Q1PACK 50A 650V
$56.47
Available to order
Reference Price (USD)
1+
$56.46857
500+
$55.9038843
1000+
$55.3391986
1500+
$54.7745129
2000+
$54.2098272
2500+
$53.6451415
Exquisite packaging
Discount
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Discover the power of onsemi's NXH50M65L4Q1SG, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The NXH50M65L4Q1SG performs exceptionally well in high-voltage DC transmission and pulsed power applications. With onsemi's NXH50M65L4Q1SG, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Power - Max: 86 W
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 27-PIM (71x37.4)
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