FGA50S110P
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.54
Available to order
Reference Price (USD)
450+
$2.23576
Exquisite packaging
Discount
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Optimize your power systems with the FGA50S110P Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGA50S110P delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1100 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 195 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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