SGB07N120ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 16.5A 125W TO263-3-2
$3.00
Available to order
Reference Price (USD)
1,000+
$1.90865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SGB07N120ATMA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the SGB07N120ATMA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16.5 A
- Current - Collector Pulsed (Icm): 27 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 1mJ
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/440ns
- Test Condition: 800V, 8A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
Related Products
Infineon Technologies
IKW20N60TAFKSA1
STMicroelectronics
STGB30H65DFB2
Alpha & Omega Semiconductor Inc.
AOK20B120E2
Infineon Technologies
IKW50N60TFKSA1
Microchip Technology
APT40GP90B2DQ2G
onsemi
FGY75T95SQDT
STMicroelectronics
STGB25N40LZAG
onsemi
MGP14N60E
IXYS
MMIX1X100N60B3H1
Infineon Technologies