SGB10N60AATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 92W TO263-3
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SGB10N60AATMA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the SGB10N60AATMA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
- Power - Max: 92 W
- Switching Energy: 320µJ
- Input Type: Standard
- Gate Charge: 52 nC
- Td (on/off) @ 25°C: 28ns/178ns
- Test Condition: 400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
Related Products
Renesas Electronics America Inc
RJH6075DPM-N0#T0
IXYS
IXYH16N170CV1
IXYS
IXXP12N65B4D1
Rohm Semiconductor
RGTH50TK65DGC11
Rohm Semiconductor
RGT50TM65DGC9
Renesas Electronics America Inc
RJH60A83RDPE-00#J3
Microchip Technology
APT25GR120BD15
Fairchild Semiconductor
FGD2N40L
Infineon Technologies
IHW15N120E1XKSA1
STMicroelectronics