IXXP12N65B4D1
IXYS
IXYS
IGBT
$2.69
Available to order
Reference Price (USD)
50+
$2.43340
Exquisite packaging
Discount
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Experience top-tier performance with the IXXP12N65B4D1 Single IGBT transistor from IXYS. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IXXP12N65B4D1 ensures energy efficiency and reliability. Trust IXYS's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 70 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
- Power - Max: 160 W
- Switching Energy: 440µJ (on), 220µJ (off)
- Input Type: Standard
- Gate Charge: 34 nC
- Td (on/off) @ 25°C: 13ns/158ns
- Test Condition: 400V, 12A, 20Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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