STGW60H65DFB-4
STMicroelectronics
STMicroelectronics
IGBT
$4.45
Available to order
Reference Price (USD)
600+
$5.69625
Exquisite packaging
Discount
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Enhance your electronic projects with the STGW60H65DFB-4 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGW60H65DFB-4 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGW60H65DFB-4 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 346µJ (on), 1.161mJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 65ns/261ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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