IRGB15B60KDPBF-INF
Infineon Technologies
Infineon Technologies
IGBT, 31A I(C), 600V V(BR)CES, N
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
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Upgrade your power management systems with the IRGB15B60KDPBF-INF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRGB15B60KDPBF-INF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRGB15B60KDPBF-INF for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 31 A
- Current - Collector Pulsed (Icm): 62 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 208 W
- Switching Energy: 220µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 34ns/184ns
- Test Condition: 400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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