FGB40N6S2
Fairchild Semiconductor

Fairchild Semiconductor
N-CHANNEL IGBT
$3.09
Available to order
Reference Price (USD)
1+
$3.09000
500+
$3.0591
1000+
$3.0282
1500+
$2.9973
2000+
$2.9664
2500+
$2.9355
Exquisite packaging
Discount
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Enhance your electronic projects with the FGB40N6S2 Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGB40N6S2 ensures precision and reliability. Fairchild Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGB40N6S2 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
- Power - Max: 290 W
- Switching Energy: 115µJ (on), 195µJ (off)
- Input Type: Standard
- Gate Charge: 35 nC
- Td (on/off) @ 25°C: 8ns/35ns
- Test Condition: 390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)