FGB7N60UNDF
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.03
Available to order
Reference Price (USD)
800+
$1.41671
Exquisite packaging
Discount
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Discover the FGB7N60UNDF Single IGBT transistor by Fairchild Semiconductor, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the FGB7N60UNDF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the FGB7N60UNDF for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 21 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
- Power - Max: 83 W
- Switching Energy: 99µJ (on), 104µJ (off)
- Input Type: Standard
- Gate Charge: 18 nC
- Td (on/off) @ 25°C: 5.9ns/32.3ns
- Test Condition: 400V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr): 32.3 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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